Характеристики транзистора b772 (2sb772)

B772-R Datasheet (PDF)

0.1. 2sb772-r.pdf Size:287K _mcc

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

0.2. b772-r b772-y.pdf Size:245K _mcc

B772-RMCCMicro Commercial ComponentsTMB772-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 B772-YPhone: (818) 701-4933B772-GRFax: (818) 701-4939Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55O

 9.1. 2sb772-y.pdf Size:287K _mcc

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

9.2. 2sb772-gr.pdf Size:287K _mcc

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

 9.3. 2sb772-o.pdf Size:287K _mcc

2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) («P» Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat

9.4. b772-gr b772-o.pdf Size:245K _mcc

B772-RMCCMicro Commercial ComponentsTMB772-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 B772-YPhone: (818) 701-4933B772-GRFax: (818) 701-4939Features Capable of 1.25Watts of Power Dissipation. PNP Silicon Collector-current 3.0APlastic-Encapsulate Collector-base Voltage 40V Operating and storage junction temperature range: -55O

 9.5. 2sb772-s.pdf Size:174K _fci

9.6. 2sb772-126.pdf Size:891K _kexin

DIP Type TransistorsPNP Transistors2SB772TO-126Unit:mm8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage3.20 0.10 Complement to 2SD882(1.00) (0.50)0.75 0.101.75 0.201.60 0.100.75 0.101 2 3#1+0.102.28TYP 2.28TYP 0.50 0.05 1. Base2. Collector3. Emitte

B772P Datasheet PDF — NEC

Part Number B772P
Description 2SB772
Manufacturers NEC 
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DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES

• Low saturation voltage

VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE

hFE = 60 to 400 (VCE = −2 V, IC = −1 A)

• Less cramping space required due to small and thin package and

reducing the trouble for attachment to a radiator.
No insulator bushing required.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
Maximum Power Dissipation

−55 to +150°C

150°C Maximum

Total Power Dissipation (TA = 25°C)

Total Power Dissipation (TC = 25°C)

Maximum Voltages and Currents (TA = 25°C)

VCBO

Collector to Base Voltage

VCEO

Collector to Emitter Voltage

VEBO

Emitter to Base Voltage

IC(DC)

Collector Current (DC)

IC(pulse)Note Collector Current (pulse)

Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%

1.0 W
10 W

−40 V

−30 V

−5.0 V

−3.0 A

−7.0 A

12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC Current Gain

hFE1

VCE = −2.0 V, IC = −20 mANote

DC Current Gain

hFE2

VCE = −2.0 V, IC = −1.0 mANote

Gain Bandwidth Product

fT VCE = −5.0 V, IC = −0.1 A

Output Capacitance

Cob VCB = −10 V, IE = 0, f = 1.0 MHz

Collector Cutoff Current

ICBO VCB = −30 V, IE = 0 A

Emitter Cutoff Current

IEBO VEB = −3.0 V, IC = 0 A

Collector Saturation Voltage

VCE(sat)

IC = −2.0 A, IB = −0.2 ANote

Base Saturation Voltage

VBE(sat)

IC = −2.0 A, IB = −0.2 ANote

Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2%

MIN.
30
60
TYP.
220
160
80
55

−0.3

−1.0

MAX.
400

−1.0

−1.0

−0.5

−2.0

UNIT
MHz
pF

µA

µA

V
V

CLASSIFICATION OF hFE

Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320

Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A

E
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17118EJ2V0DS00 (2nd edition)
(Previous No. TC-3569)
Date Published March 2004 N CP(K)
Printed in Japan

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Information Total 3 Pages
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Featured Datasheets

Part Number Description Manufacturers
B772 The function is MEDIUM POWER LOW VOLTAGE TRANSISTOR. Unisonic Technologies
B772 The function is PNP (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING). Samsung semiconductor
B772 The function is Audio Frequency Power Amplifier. Fairchild Semiconductor

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Технические характеристики

Характеристики D882, приведённые в технической документации, могут встречаться с небольшими отличиями, в зависимости от того, у какого производителя взята информация. Поэтому далее приводим значения от компании Shenzhen Electronics, так как транзистор этой фирмы часто можно встретить в отечественных магазинах. Предельно допустимые значения, измеренные при температуре окружающего воздуха +25ОС:

  • напряжение коллектор-база предельно допустимое VCBO (Uкб max) = 40 В;
  • напряжение коллектор-эмиттер максимальное VCEO (Uкэ max) = 30 В;
  • напряжение эмиттер-база предельно возможное VEBO (Uэб max) = 6 В;
  • наибольший постоянный ток через коллектор IC (Iк max) = 3 А;
  • предельная мощность, рассеиваемая на коллекторе РСк max) = 1,25 Вт;
  • Диапазон температур хранения Tstg = -55 … 150 оС;
  • Максимальная температура кристалла TJ = 150 оС;

Далее производитель Shenzhen Electronics приводит электрические характеристики.

Транзисторы D882 могут иметь различные коэффициенты передачи тока и по этому свойству классифицируются следующим образом: меньше всего коэффициент у приборов с буквой R – от 60 до 120, с буквой – О чуть больше (100 — 200),  если в наименовании Y, то значение 160 — 320 и устройства с обозначением GR  имеют усиление от 200 до 400.

Приведём график зависимости Pt (рассеиваемая мощность) от T (окружающая температура). Для проведения тестирования использовался радиатор из алюминия толщиной 10 мм. По горизонтальной оси здесь отложена мощность, а по вертикальной температура.

Из графика видно, что когда температура становится выше +25ОС, мощность  уменьшается и при +150ОС становиться равной 0. Кроме этого из рисунка понятно, что чем больше площадь радиатора, тем большую мощность можно рассеять.

При тепловых расчётах может также понадобиться зависимость температурного сопротивления от длительности импульса. Измерение проводилось при таких условиях: напряжении коллектор-эмиттер 10 вольт, ток коллектора 1 ампер. При этом погрешность не более 0,001. Горизонтальная шкала, на которую нанесена длительность импульса, представлена в логарифмическом масштабе.

WTP772 Datasheet (PDF)

0.1. wtp772 wtp882.pdf Size:275K _wietron

WTP772WTP882PNP/NPN Epitaxial Planar TransistorsTO-251P b Lead(Pb)-Free1.BASE2.COLLECTOR3.EMITTER1 2 3ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/WTP772 UnitNPN/WTP882Collector-Emitter Voltage V 30 VdcCEO -30Collector-Base Voltage VCBO -4040 VdcEmitter-B ase Voltage VEBO-5.0 5.0 VdcCollector Current (DC) IC(DC)-3.0 3.0 AdcAdcCollector Current (

0.2. wtp772-ecb.pdf Size:364K _wietron

WTP772WTP882PNP/NPN Epitaxial Planar TransistorsTO-251P b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASE1 2 3ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/WTP772 UnitNPN/WTP882Collector-Emitter Voltage V 30 VdcCEO -30Collector-Base Voltage VCBO -4040 VdcEmitter-Base Voltage VEBO-5.0 5.0 VdcCollector Current (DC) IC(DC)-3.0 3.0 AdcAdcCollector Current

 0.3. wtp772-bce.pdf Size:453K _wietron

WTP772PNP Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER1 2 3TO-251ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/WTP772 UnitCollector-Emitter Voltage VCEO -30 VCollector-Base Voltage VCBO-40 VEmitter-B ase Voltage VEBO-5.0 VCollector Current (DC) IC(DC)-3.0 AA-7.0Collector Current (Pulse)1 IC (Pulse)IBB ase Current (

Биполярный транзистор HSB772 — описание производителя. Основные параметры. Даташиты.

Наименование производителя: HSB772

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 10
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 80
MHz

Ёмкость коллекторного перехода (Cc): 55
pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO-126ML

HSB772
Datasheet (PDF)

0.1. hsb772.pdf Size:51K _hsmc

Spec. No. : HE6605HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/5HSB772PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772 is designed for using in output stage of 1w audio amplifier, voltageregulator, DC-DC converter and relay driver.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperat

0.2. hsb772s.pdf Size:59K _hsmc

Spec. No. : HE6549HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5HSB772SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772S is designed for using in output stage of 0.75W amplifier, voltageregulator, DC-DC converter and driver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature………………

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Биполярный транзистор FTB772F — описание производителя. Основные параметры. Даташиты.

Наименование производителя: FTB772F

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.5
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора:

FTB772F
Datasheet (PDF)

0.1. ftb772f.pdf Size:243K _first_silicon

SEMICONDUCTORFTB772FTECHNICAL DATA AFTB772F PNP TRANSISTORCHG FEATURES Low Speed SwitchingDDKF FDIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20 MAXIMUM RATINGS (Ta=25 unless otherwise noted) C 1.70 MAX1 2 3D 0.45+0.15/-0.10E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 TYP1. BASEH 1.8 MAX2. COLLECTORVCBO Collector-Base Voltage -40

8.1. ftb772d.pdf Size:245K _first_silicon

SEMICONDUCTORFTB772DTECHNICAL DATAFTB772D TRANSISTORAI FEATURESCJ Low Speed SwitchingDIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) D 1 50 0 2E 2 70 0 2F 2 30 0 1Symbol Parameter Value Unit HH 1 00 MAXI 2 30 0 2LF FVCBO Collector-Base Voltage -40 V J 0 5 0 1L 0 50 0 101 2 3

8.2. ftb772.pdf Size:112K _first_silicon

SEMICONDUCTORFTB772TECHNICAL DATAAUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGDEAFEATURESComplementary to FTD882. CF GDIM MILLIMETERSBA 8.3 MAXMAXIMUM RATING (Ta=25 )B 11.30.3C 4.15 TYP1 2 3D 3.20.2CHARACTERISTIC SYMBOL RATING UNITE 2.00.2H F 2.80.1IVCBO -40 VCollector-Base VoltageG 3.20.1H 1.270.1KVCEO -30 VCollector

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Биполярный транзистор B772S — описание производителя. Основные параметры. Даташиты.

Наименование производителя: B772S

Тип материала: Si

Полярность: PNP

Максимальная рассеиваемая мощность (Pc): 0.625
W

Макcимально допустимое напряжение коллектор-база (Ucb): 40
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V

Макcимальный постоянный ток коллектора (Ic): 3
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 50
MHz

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора:

B772S
Datasheet (PDF)

0.1. b772ss.pdf Size:233K _utc

UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pi

0.2. 2sb772s.pdf Size:251K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882S ORDERING INFORMATION Ordering Num

 0.3. b772s.pdf Size:346K _secos

B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. BMin. Max. A 4.40 4.7

0.4. tsb772sct.pdf Size:78K _taiwansemi

TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T

 0.5. b772s.pdf Size:195K _lge

B772S Transistor(PNP)TO-921. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters)IC Collector Current -Continuous -3 A PC Collector Power Dis

0.6. hsb772s.pdf Size:59K _hsmc

Spec. No. : HE6549HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5HSB772SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772S is designed for using in output stage of 0.75W amplifier, voltageregulator, DC-DC converter and driver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature………………

0.7. btb772st3.pdf Size:221K _cystek

Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute

0.8. btb772sa3.pdf Size:352K _cystek

Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77

0.9. hb772s.pdf Size:27K _shantou-huashan

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

0.10. 2sb772s 3ca772s.pdf Size:256K _lzg

2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Аналоги

Для замены могут подойти транзисторы кремниевые, со структурой NPN, эпитаксиально-планарные, предназначенные для использования в импульсных источниках питания, пускорегулирующих устройствах, схемах управления электродвигателями и др., аппаратуре общего применения.

Отечественное производство

Транзисторы, близкие по параметрам к серии 13003 (MJE13003).

Тип PC, Вт UCB, В UCE, В UBE, В IC, А UCE(sat), В Tj , °С fT , МГц hFE ton / ts / tf, мкс Корпус
MJE13003 40 700 400 9 2 0,6 150 4 5…40 — / 3,5 / 1 TO-126
КТ8170А 40 700 400 9 2,25 3 150 4 5…40 1,1 / 4 / 0,7 TO-126
КТ859А 40 800 800 10 3 1,5 150 ˃ 3,3 ˃ 10 0,35 / 3,3 / 0,35 TO-220AB
КТ841А/В 50 600/800 350 5 10 1,5 150 10 12…45 0,08 / 0,8 / 0,2 TO-3
КТ8118А 50 900 800 3 ˂ 2,0 150 ˃ 15 10…40 TO-220
КТ8120А 60 600 450 5 8 1 150 20 ˃ 10 — / 2 / 0,2 TO-220
КТ840А/Б/В 60 900/750/800 400/350/375 5 6 0,6 150 8…15 10…60 0,2 / 3,5 / 0,6 TO-3
КТ868А/Б 70 900/750 400/375 5 6 1,5 150 ˃ 8 10…100 TO-3PML

Зарубежное производство

Аналоги транзистора E13003 (MJE13003).

Тип PC, Вт UCB, В UCE, В UBE, В IC, А UCE(sat), В Tj , °С fT , МГц hFE ton / ts / tf, мкс Корпус
MJE13003 40 700 400 9 2 0,6 150 4 5…40 — / 3,5 / 1 TO-126
3DD1910 40 700 400 9 2,5 1 150 5 15…30 1 / 5 / 0,8 TO-126A
3DD13005A7 40 800 400 9 3 0,6 150 5 15…35 1 / 5 / 1 TO-126F
WBR13005D1 40 700 400 9 4 1 150 4 10…40 — / 3,6 / 1,6 TO-126
BTN3A60T3 40 900 700 9 3 0,6 150 4 10…40 TO-126
HLD133D 35 700 400 9 2 1 150 5…40 — / 4 / 0,8 TO-126
ST13007DFP 36 700 400 9 8 3 150 4 8…40 — / 2,2 / 0,15 TO-220FP
BUL310FP 36 1000 500 9 5 1,1 150 10 — / 1,8 / 0,5 TO-220FP

Аналоги транзисторов 13003BR (MJE13003BR) и 13003T (KSE13003T).

Тип PC, Вт UCB, В UCE, В UBE, В IC, А UCE(sat), В Tj , °С fT , МГц hFE ton / ts / tf, мкс Корпус
MJE13003BR 30 600 400 9 2 0,85 150 5…40 — / 3 / 0,8 TO-126
BLD123D 30 600 400 9 2 0,9 150 5…40 — / 4 / 0,8 TO-126
KSE13003T 30 700 400 9 1,5 3 150 4 5…40 1,1 / 4 / 0,7 TO-220
FJPE3305 30 700 400 9 4 1 150 4 8…40 0,8 / 4 / 0,9 TO-220F
KSH13005AF 30 700 400 9 4 1 150 4 8…60 0,8 / 4 / 0,9 TO-220F
MJE13005AF 30 800 400 10 5 1 150 4 8…35 0,15 / 5 / 0,8 TO-220IS
MJE13005F 30 700 400 9 4 1 150 4 10…35 0,8 / 4 / 0,9 TO-220IS
STD13005F/FC 30 700 400 9 4 1 150 4 8…40 0,8 / 4 / 0,9 TO-220F-3L
STL128DFP 30 700 400 4 1,5 150 10…32 — / 0,6 / 0,1 TO-220FP
TS13005CI 30 700 400 9 4 1 150 4 8…40 0,7 / 3 / 0,5 ITO-220
TSC236CI 30 700 400 9 4 1,3 150 8…32 0,5 / 3 / 0,5 ITO-220
BUL128FP 31 700 400 9 4 1,5 150 10…45 — / 2,9 / 0,4 TO220FP

Примечание: данные таблиц получены из даташип компаний-производителя.

B772M Datasheet (PDF)

0.1. b772m.pdf Size:643K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L B772M TRANSISTOR (PNP) FEATURES 1. BASE Low Speed Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

0.2. 2sb772m.pdf Size:341K _blue-rocket-elect

2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications ,,

 0.3. 2sb772m 3ca772m.pdf Size:220K _lzg

2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR :,, Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE/Absolut

Биполярный транзистор 13005A — описание производителя. Основные параметры. Даташиты.

Наименование производителя: 13005A

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 75
W

Макcимально допустимое напряжение коллектор-база (Ucb): 700
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 9
V

Макcимальный постоянный ток коллектора (Ic): 4
A

Предельная температура PN-перехода (Tj): 150
°C

Граничная частота коэффициента передачи тока (ft): 5
MHz

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора:

13005A
Datasheet (PDF)

0.1. mje13005a.pdf Size:273K _nell

RoHS MJE13005A(NPN)RoHS SEMICONDUCTORNell High Power ProductsSwitchmode Series NPN Silicon Power Transistors(4A / 400V / 75W)FEATURESVCEO(SUS) 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 ASwitching time — tf = 0.9 s (Max.) @ lC = 2 A 700V blocking capability123TO-220AB(MJE13005A) DESCRIPTION These devices are designed for high-

0.2. 3dd13005a1.pdf Size:180K _crhj

NPN R 3DD13005 A1 3DD13005 A1 NPN VCEO 400 V IC 3 A Ptot Ta=25 0.8 W

 0.3. 3dd13005a7.pdf Size:145K _crhj

NPN R 3DD13005 A7 3DD13005 A7 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

0.4. 3dd13005a3.pdf Size:143K _crhj

NPN R 3DD13005 A3 3DD13005 A3 NPN VCEO 400 V IC 3 A Ptot W TC=25 40

 0.5. s13005a.pdf Size:113K _jdsemi

RS13005A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.6. 13005adl.pdf Size:121K _jdsemi

R13005ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.7. h13005adl.pdf Size:120K _jdsemi

RH13005ADL www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Mainly used for 110V power Fluorescent Lamp Electronic Ballastetc 222

0.8. 13005ad.pdf Size:121K _jdsemi

R13005AD www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast and Switch-mode power supplies 222

0.9. 13005a.pdf Size:113K _jdsemi

R13005A www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22

0.10. ksg13005ar.pdf Size:220K _semihow

KSG13005AR SEMIHOW REV.A0,Feb 2009KSG13005ARKSG13005ARSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls3 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted3.8 WattsTO-92LCHARACTERISTICS SYMBOL RATING UNIT1. Emitter2. Collec

0.11. ksu13005a.pdf Size:558K _semihow

KSD13005A KSU13005A SEMIHOW REV.A1,August 2013 KSD13005A_KSU13005AKSU13005A/KSU13005A Switch Mode series NPN silicon Power Transistor — High voltage, high speed power switching — Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 40 Watts TO-252 / TO-251 CHARA

0.12. ksd13005a.pdf Size:558K _semihow

KSD13005A KSU13005A SEMIHOW REV.A1,August 2013 KSD13005A_KSU13005AKSU13005A/KSU13005A Switch Mode series NPN silicon Power Transistor — High voltage, high speed power switching — Suitable for switching regulator, inverters motor controls 4 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 40 Watts TO-252 / TO-251 CHARA

0.13. ksh13005a.pdf Size:227K _semihow

KSH13005AKSH13005A SEMIHOW REV.A1,Oct 2007KSH130005AKSH13005ASwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO-220

0.14. ksh13005af.pdf Size:223K _semihow

KSH13005AFKSH13005AF SEMIHOW REV.A1,Oct 2007KSH130005AFKSH13005AFSwitch Mode series NPN silicon Power TransistorSwitch Mode series NPN silicon Power Transistor- High voltage, high speed power switching- Suitable for switching regulator, inverters motor controls4 AmperesNPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted75 WattsTO

Другие транзисторы… , , , 13001-0
, 13001-2
, 13001-A
, 13003AD
, 13003B
, S9012
, 13005AD
, 13005ADL
, 13005D
, 13005DL
, 13005ED
, 13005F
, 13005S
, 13005SD
.

B772S Datasheet (PDF)

0.1. b772ss.pdf Size:233K _utc

UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to D882SS ORDERING INFORMATION Order Number Pi

0.2. 2sb772s.pdf Size:251K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882S ORDERING INFORMATION Ordering Num

 0.3. b772s.pdf Size:346K _secos

B772S -3A , -40V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low speed switching. G H1Emitter 1112Collector 222J3Base 333CLASSIFICATION OF hFE A DMillimeter Product-Rank B772S-R B772S-O B772S-Y B772S-GR REF. BMin. Max. A 4.40 4.7

0.4. tsb772sct.pdf Size:78K _taiwansemi

TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter BVCBO -50V 2. Collector 3. Base BVCEO -30V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSD882S TSB772SCT B0 TO-92 1Kpcs / Bulk Structure T

 0.5. b772s.pdf Size:195K _lge

B772S Transistor(PNP)TO-921. EMITTER 2. COLLECTOR 3 BASE Features Low speed switching MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters)IC Collector Current -Continuous -3 A PC Collector Power Dis

0.6. hsb772s.pdf Size:59K _hsmc

Spec. No. : HE6549HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5HSB772SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772S is designed for using in output stage of 0.75W amplifier, voltageregulator, DC-DC converter and driver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature………………

0.7. btb772st3.pdf Size:221K _cystek

Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute

0.8. btb772sa3.pdf Size:352K _cystek

Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77

0.9. hb772s.pdf Size:27K _shantou-huashan

PN P S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. P HB772S AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING TO-92 ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector Dissipation

0.10. 2sb772s 3ca772s.pdf Size:256K _lzg

2SB772S(3CA772S) PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE

2SA772 Datasheet (PDF)

9.1. 2sa777.pdf Size:46K _panasonic

Transistor2SA777Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC15095.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo

9.2. 2sa777 e.pdf Size:50K _panasonic

Transistor2SA777Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC15095.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo

 9.3. 2sa778.pdf Size:42K _hitachi

2SA778(K), 2SA778A(K)Silicon PNP EpitaxialApplicationHigh voltage medium speed switchingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA778(K), 2SA778A(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA778(K) 2SA778A(K) UnitCollector to base voltage VCBO 150 180 VCollector to emitter voltage VCEO 150 180 VEmitter to base voltage VEBO 5

9.4. 2sa770 2sa771.pdf Size:152K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbs

 9.5. 2sa775.pdf Size:147K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA775 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND

9.6. 2sa770 2sa771.pdf Size:236K _sanken-ele

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

9.7. 2sa779.pdf Size:181K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA779DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -35V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementa

9.8. 2sa770 2sa771.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy

9.9. 2sa775.pdf Size:201K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA775DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -100V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose output amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

9.10. 2sa770.pdf Size:216K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA770DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -60(V)(Min.)(BR)CEOComplement to Type 2SC1985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.11. 2sa771.pdf Size:216K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA771DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -80(V)(Min.)(BR)CEOComplement to Type 2SC1986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol